| 摘要 |
PROBLEM TO BE SOLVED: To reduce the harmful effects of hydrogen and hold superior electrical characteristics of a ferroelectric. SOLUTION: This integrated circuit is formed so as to have a ferroelectric element having a metal oxide material with at least two metals, the oxygen recovery anneal is made in an oxygen atmosphere at 300-1,000 deg.C for 20 min to 2 hr to return the effects of the performance reduction due to hydrogen to the original and recover ferroelectric characteristics and become more effective with the increase in the anneal temperature and time. The metal oxide material preferably has a laminar superlattice compound having an SrBiTa niobate, the performance reduction of the ferroelectric characteristics due to hydrogen is minimum, when the niobate to tantalum mol ratio in a precursor is about 0.4 and becomes minimum, when at least one of B-site elements and superlattice generating elements of the superlattice compound exists in excess with respect to the equilibrium stoichiometric composition of the compound. |
