| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory in which a sign generating a data inversion in read-out data can be discriminated by a method wherein, in a change with the passage of time of the electric charge of a floating-gate electrode, detected data generates an error data inversion earlier than the read- out data. SOLUTION: A memory element 3a and a sense amplifier 7 for detection are formed on a semiconductor substrate which is identical to that of a memory element 2a. The potential difference between the voltage of a detected signal obtained in the injection of an electric charge into a floating-gate electrode and the threshold voltage of the sense amplifier 7 for detection is set to be smaller than the potential difference between the voltage of a read-out signal obtained in the injection of the electric charge into the floating-gate electrode and the threshold voltage of a sense amplifier 6 for readout. Thereby, in a change with the passage of time after the injection of the electric charge into the floating-gate electrode, detected data DD can be inverted earlier than read- out data RD. Consequently, when the data inversion of its detected signal is detected, a sign which generates the data inversion of the read-out data RD can be discriminated. |
