| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a wafer can be cleaved near the light entrance end of a semiconductor photodetector with high yield at the time of cutting the photodetector from the wafer. SOLUTION: In a method for manufacturing a refraction type semiconductor photodetector which is constituted to make incident light to pass through a light receiving layer 13 obliquely to the thickness direction of the layer 13 by refracting the incident light at a light entrance end face 11 by providing a light receiving section composed of a multilayered semiconductor structure containing the light receiving layer 13 formed on the surface of a substrate 15 and the light entrance end face 11 the inward inclined angle of which becomes larger as becoming farther from the surface side and which is provided on the end face of the photodetector, the width 2W between the upper ends of an inverted-mesa etched groove is adjusted to 2W<=2(H+Hc)tanδ(where, H, Hc, andδrespectively represent the depth to the deepest bottom of the etched groove, depth of a cleave scratch, and the half of the opening angle 2δof the front end section of a needle used for forming the cleavage scratch) after an inverted-mesa etched groove forming process for forming the light entrance end face 11.
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