| 摘要 |
PROBLEM TO BE SOLVED: To provide a membrane structure which does not generate large residual stress on a membrane layer and a method of manufacturing the same. SOLUTION: An etching stop layer 2 is formed on a support substrate 1, and a membrane 3 is further formed in such a way as to be supported by the etching stop layer 2. An opening (through hole) is formed in the support substrate 1, and an opening (through hole) is also formed in the etching stop layer 2 at a position corresponding to the opening of the support substrate 1. The membrane 3 alone is present at the opening portion of the etching stop layer 2, and this portion is used as an independent thin film for a sensor or the like. This structure eliminates the need for making high-concentration doping in the membrane 3 at the time of production, and can thus prevent occurrence of high residual stress. |
