| 摘要 |
PROBLEM TO BE SOLVED: To eliminate annoying patterning of a antircflection film having a micro-rugged surface which is formed on a silicon substrate and prevent the lowering of the strength of an electrode which is formed directly on the antireflection film. SOLUTION: In this solar cell, reverse conductivity type semiconductor impurities are given to the surface side of a silicon substrate 1 containing one- conductivity type semiconductor impurities, and electrodes 3 and 4 are formed respectively on the surface and backsides thereof. A number of fine projections of 2 μm or lower in width and height are provided on the surface side thereof, and a reflection prevention film 2 comprising silicon nitrate film of 50-600 Åin thickness is formed thereon, and then an electrode 3 is formed directly on the antireflection film 2. |
