| 摘要 |
PROBLEM TO BE SOLVED: To avoid shrinkage or morphological degradation due to the grain growth of finely formed upper electrode Pt by micromaching Pt, after heat treating it. SOLUTION: This manufacturing method comprises forming a selective transistor on the surface of an Si substrate 1 through the known technology, forming a first Si oxide film 6 to be a layer insulation, forming contact holes, filling polysilicon in the contact holes, flattening the surface, forming a polysilicon plug 7, forming a TaSi nitride film 8 on the polysilicon plug 7, forming an Ir film 9 and Ir oxide film 10, forming an SBT film 11 on the Ir oxide film 10, forming a Pt film thereon, heat treating in oxygen, processing the Pt film to be an upper electrode by the dry etching method, and sequentially processing an upper electrode 12, the SBT film 11, Ir oxide film 10, Ir film 9 and TaSi nitride film 8. |
