| 摘要 |
PROBLEM TO BE SOLVED: To form a fuse consisting of a polysilicon film, without augmenting the production cost of the fuse in a microscopically developed semiconductor storage device. SOLUTION: A fuse 8a is formed on an isolation oxide film 2 on a redundancy circuit region interposing a polycide film 7a and a silicon nitride film 6b1 between the film 2 and the fuse 8a. The film 7a is formed in the same process as that for forming gate electrodes (word lines) 7, the film 6b1 is formed in the same process as that for forming silicon nitride films 6b, and the fuse 8a is formed in the same process as that for forming a polysilicon plug 8. |
