发明名称 LEVEL SHIFT CIRCUIT AND NONVOLATILE MEMORY PROVIDED WITH THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To reduce the required junction breakdown voltage of a transistor, to eliminate the need for a transistor of high breakdown voltage structure and to impress an optional voltage level as an input signal regardless of the active time and inactive time of a negative voltage generation circuit. SOLUTION: This circuit is provided with a negative voltage generation circuit 1, for being activated in response to the supply of negative voltage control signals C and outputting the negative voltage signals VB1 of a negative voltage VBB1 and a voltage conversion circuit 10B operated, so as to output the output signals LO of a negative voltage level VB1 in response to the supply of the input signal IN at the supplying of the negative voltage signals VB1 and output the output signals LO of the same level as the input signal IN, when the negative voltage generation means is inactive.</p>
申请公布号 JPH11308092(A) 申请公布日期 1999.11.05
申请号 JP19980114750 申请日期 1998.04.24
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 SOMA YOSHITAKA
分类号 G11C16/06;H03K19/0185;(IPC1-7):H03K19/018 主分类号 G11C16/06
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