CHEMICAL AMPLIFICATION TYPE PHOTORESIST AND RESIST PATTERN FORMING METHOD USING THE PHOTORESIST

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification type photoresist exhibiting excellent sensitivity and resolution and giving a pattern of a good sectional shape when a minute resist pattern of 0.15-0.22μm is formed using KrF excimer laser. SOLUTION: (A) A copolymer consisting of 50-85 mol.% hydroxyl-contg. sysrene units, 15-35 mol.% styrene units and 2-20 mol.% units of a tert. butyl ester of acrylic acid or methacrylic acid is blended with (B) an acid generating agent which generates an acid when irradiated to obtain the objective chemical amplification type photoresist. This photoresist is suitable for use as a photoresist for KrF excimer laser, has high sensitivity and resolution and con give an ultra-minute pattern of a good sectional shape faithful to a mask pattern. It is also suitable for use as a chemical amplification type photoresist for electron beams or X-rays.