| 摘要 |
PROBLEM TO BE SOLVED: To prevent production of sulfur residue on a wafer and to easily remove a photoresist residue by cleaning a wafer with deposition of a residual matter on its surface metal layer by using a developer. SOLUTION: After a photoresist layer on a wafer with deposition of the photoresist on its metal layer is removed (31), the wafer is cleaned with a deionized water (32). The wafer is rotated at a high spinning rate to form a deionized water film on the wafer (33). By decreasing the spinning rate, the deionized water film is uniformly distributed on the wafer due to the surface tension of the water. Then a developer is introduced into the deionized water film, and the concn. of the developer is decreased by the deionized water film (34). Thereby the alkalinity of the developer is decreased, which suppresses possibility to form a recess on the wafer surface. The spinning rate is increased to uniformly mix the developer and the deionized water film, and then spinning speed is decreased to remove the residual matter on the metal layer (35). Then the soln. on the wafer is cleaned with water (36). |
