BOOST CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a boost circuit in which a boost voltage with a small change can be output at high speed and in which the resetting and precharging time is shortened and to obtain a high-speed and high-reliability semiconductor memory device. SOLUTION: A boost voltage VBOOST is generated by two boost circuit units 1, 2 whose outputs are short-circuited. A boost-voltage detection circuit 3 activates a boost stop signal BLIMT when the boost voltage VBOOST becomes a reference voltage REF or higher. A boost control circuit 4 stops the function of the boost circuit unit 2 in response to the boost stop signal BLIMT. After that, the boost voltage VBOOST is generated only by the boost circuit unit 1. In the meantime, a current passage does not exist in order to make the boost voltage VBOOST constant.