| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon wafer holding soaking plate and a CVD device, wherein stable film thickness distribution can be obtained even if silicon wafers of various sizes are used. SOLUTION: A silicon wafer holding soaking plate 10 for holding a silicon wafer in a chemical vapor growth device is composed of a disc 1 and a silicon hollow plate 2 with a hollow part. The silicon hollow plate 2 is temporarily fixed on the disc 1 almost concentrically. A silicon wafer to be subjected to film formation is fit in the hollow part. Stable film thickness distribution can be obtained in silicon wafers of various sizes by the wafer holding soaking plate 10 in the CVD device.</p> |
