发明名称 |
PROCESS MONITORING METHOD AND DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To measure the film thickness distribution on a processed base substance which is loaded on a plasma CVD device. SOLUTION: A measurement region in a specific area is irradiated with a white color light from a light source 11 through the intermediary of a half mirror 12 and a lens 13, while the reflected light from the measured region 10 enters a spectroscope 14 through the intermediary of the lens 13 and the half mirror 12. With such a constitution, the reflected light passing through the spectroscope 14 enters a two-dimensional CVD 15 which is further connected to a data processor 16. |
申请公布号 |
JPH11307604(A) |
申请公布日期 |
1999.11.05 |
申请号 |
JP19980107689 |
申请日期 |
1998.04.17 |
申请人 |
TOSHIBA CORP |
发明人 |
YANO HIROYUKI;OKUMURA KATSUYA |
分类号 |
G01B11/06;G01J3/28;H01L21/205;H01L21/302;H01L21/304;H01L21/3065;H01L21/66;(IPC1-7):H01L21/66;H01L21/306 |
主分类号 |
G01B11/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|