发明名称 PROCESS MONITORING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To measure the film thickness distribution on a processed base substance which is loaded on a plasma CVD device. SOLUTION: A measurement region in a specific area is irradiated with a white color light from a light source 11 through the intermediary of a half mirror 12 and a lens 13, while the reflected light from the measured region 10 enters a spectroscope 14 through the intermediary of the lens 13 and the half mirror 12. With such a constitution, the reflected light passing through the spectroscope 14 enters a two-dimensional CVD 15 which is further connected to a data processor 16.
申请公布号 JPH11307604(A) 申请公布日期 1999.11.05
申请号 JP19980107689 申请日期 1998.04.17
申请人 TOSHIBA CORP 发明人 YANO HIROYUKI;OKUMURA KATSUYA
分类号 G01B11/06;G01J3/28;H01L21/205;H01L21/302;H01L21/304;H01L21/3065;H01L21/66;(IPC1-7):H01L21/66;H01L21/306 主分类号 G01B11/06
代理机构 代理人
主权项
地址