FORMING METHOD OF RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To form an ultrafine resist pattern having fidelity to a mask pattern and good cross-sectional form by using a resist compsn. which contains a specified copolymer as a resin component and a specified acid producing agent, and specifying the drying temp. after applying the compsn. and the heating temp. after exposure. SOLUTION: A chemically amplifying positive resist compsn. described below is used. This compsn. consists of a copolymer resin component comprising 50 to 85 mol.% hydroxyl group-contg. styrene unit, 15 to 35 mol.% styrene unit and 2 to 20 mol.% acrylate or methacrylate unit having a dissolution inhibiting group which can be released by an acid, and an onium salt as an acid producing agent containing 1-10C fluoroalkyl sulfonic acid ion as an anion. This resist compsn. is applied on a substrate, dried at 120 to 140 deg.C, exposed through a mask pattern, heat treated at 110 to 130 deg.C lower than the drying temp., and then developed.