| 摘要 |
PROBLEM TO BE SOLVED: To provide a reforming method of a thin film which prevents contraction of a substrate due to heating of a substrate and warp of a substrate, permits precise laser casting on a desired position which can be mechanically controlled, enables casting of a fine pattern of a line width of about 1μm on a substrate and permits heating of a substrate to 500 deg.C or higher, while restraining contraction and warp of a substrate, and a device used for its operation. SOLUTION: When a semiconductor silicon thin film 102 on an insulating glass substrate 101 is crystallized by XeCl excimer laser 103, CO2 laser 104 of a wavelength of 9 to 11μm is cast on the substrate 101 simultaneously or before or after it to selectively heat a part of the substrate 101 in an area near an interface between the substrate 101 and the semiconductor thin film 102. According to this constitution, contraction of a substrate and warp of a substrate due to heating of a substrate can be prevented and precise irradiation to a desired position which can be mechanically controlled is possible. As a result, a fine pattern of a small focus depth and a line width of about 1μm can be cast on a substrate by the device.
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