| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device, which removes a polymer film, improves the reliability of the formation of a wiring and also rises improves the economical efficiency of the manufacture of the device. SOLUTION: Interlayer films 5 are etched, until a part of a lower wiring layer 3 is exposed and a via contact hole H1 is formed (a). At this time, a polymer film 15 is formed on the inner surface of the hole H. Then, the polymer film 15 from the inner surface of the hole H1 is peeled (process 1) off by a developing solution, which is used at the time of developing a photoresist 7. After a photoresist 7 is ashed (process 2) in an O2 plasma, residues, such as the photoresist 7 left unremoved by the ashing, are removed (process 3) using a peeling solution consisting of an organic solvent. |
