| 摘要 |
PURPOSE:To enhance dark resistance characteristics of a photosensitive body made of Se by lowering the content of C in the Se source so as to reduce said content in the deposited film to a specified value or less in the vapor deposition process. CONSTITUTION:The Cl content in a Se deposited film can be lowered by using the source of Se reduced in said content in the vapor deposition process. As the method for reducing the Cl content in the Se source, the vacuum evaporation of Se under high vacuum, reduced pressure distillation of Se in an atm. of high- purity H2, sufficient washing of Se with pure water after production of Se reduced with SO2, etc. are used. As a result, deterioration of dark resistance characteristics of the Se photosensitive body can be prevented by lowering the Cl content of the Se vapor deposited film to <=3ppm. |
