| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved controllable transfer device used for a memory or transistor structure. SOLUTION: A barrier structure 3 comprising moderately conductive materials 1, 13, 11', and 13', and non-conductive material regions 10 and 12, an output region 2 for receiving charged carriers passing the barrier structure, and an input region 6 for supplying the charged carriers are provided, and the barrier structure is so constituted that charged carrier flow occurs in the structure in a first state, while the charged carrier flow in the structure is prevented in a second state. The non-conductive material region is so constituted that the energy band profile is imparted, comprising guard barrier components 14 and 16 close to the output region and input region, respectively, and a main barrier component 15 between the guard barrier components is brought about, and the main barrier component has a width w' of 2 nm or more, while a guard barrier w has a width of 3 nm or less, and these barriers separated by 45 nm or less. |
