| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning and removing agent for photoresist ashing residue capable of sufficiently removing photoresist ashing residues such as an incomplete ash of a photoresist or films depositing on side walls and having low corrosion property for insulating films or conductive films on a substrate wafer. SOLUTION: This cleaning and removing agent for photoresist ashing residue consists of a fluorine-based surfactant soln. of 0.01 to 5 wt.% concn., preferably an aq.soln. of perfluoroalkyl ammonium salt. By using this cleaning and removing agent, residues after the ashing treatment of a photoresist can be well removed. This agent shows high removing ability for films depositing on side walls or incomplete ash of a photoresist produced by RIE or the like, and further, for an incomplete ash of a photoresist modified by ion injection. Moreover, it has low corrosive property for insulating films or conductive films on the substrate wafer. |
