| 摘要 |
PURPOSE:To obtain a preferable ohmic contact by setting the specific resistance of an N type silicon crystal contacted with Cr to the specific value or lower when the Cr is used as a metal electrode on the first layer of a semiconductor device. CONSTITUTION:An N-P-N type power transistor having an N type epitaxial substrate 6 including 0.01OMEGAcm of specific resistance, an emitter diffused layer 1, a base diffused layer 2, an epitaxially grown layer 3 and Cr electrodes 5 is provided. An ohmic contact is obtained by setting the specific resistance of the N type silicon contacted with the Cr electrode to 0.01OMEGAcm or lower to improve VCE(sat) characteristic. Table shows the relationship between the specific resistance of the N type silicon and the contacting resistance of the Cr. The contacting resistance becomes nonohmic contact when the specific resistance of the N type silicon is 0.015OMEGAcm or higher, and becomes ohmic contact when 0.01OMEGAcm or lower. As the specific resistance decreases, the contacting resistance reduces. |
