| 摘要 |
PROBLEM TO BE SOLVED: To largely reduce the production time and cost of a photomask by using a phase shift mask to form an auxiliary pattern by a self-aligning method. SOLUTION: A first attenuated phase shift mask containing a first pattern is formed. The first pattern consists of plural openings of the attenuated phase shift mask and is arranged to produce side lobe light. Then a first resist pattern 16 of a negative resist film 14 is formed by using the mask above described, and the first resist pattern 16 is used as a mask to etch a part of the optical member comprising an attenuated phase shift film 1 and a lightshielding film 10 to form a second pattern 18. Then a second resist film is formed on the second resist pattern 18, and a second resist pattern comprising the second resist film which is applied to cover at least a part formed to correspond the side lobe light is formed in the second pattern. Then the obtd. second resist pattern is used as a mask to etch the residual part of the optical member. |
