发明名称 |
NARROW SPECTRAL WIDTH HIGH POWER DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS |
摘要 |
High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 mu m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths. |
申请公布号 |
WO9956358(A1) |
申请公布日期 |
1999.11.04 |
申请号 |
WO1999US07197 |
申请日期 |
1999.03.31 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
BOTEZ, DAN;EARLES, THOMAS, L.;MAWST, LUKE, J. |
分类号 |
H01S5/12;H01S5/20;H01S5/343 |
主分类号 |
H01S5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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