| 摘要 |
<p>A grinding wheel capable of polishing only protruded parts and having a self-stop function so that the polishing is terminated automatically when irregularities have been eliminated by the polishing and a polishing method using the grinding wheel in the polishing of a semiconductor wafer having irregular patterns on its surface, the grinding wheel for polishing a substrate to flat- and mirror-shape comprising abrasive grains of 2 νm or less in particle size and 90 % or more in purity, with an abrasive grain to binder composition ratio (volume ratio) of 1: 0.5 or more (the ratio of binder to abrasive grain is 0.5 or more to 1), and with an abrasive grain of 10 % or higher, a binder of 60 % or less, and pores of 10 to 40 %. A substrate polishing method wherein the substrate having a surface forming irregularities thereon is polished with a grinding wheel, comprising the steps of polishing, for a specified time, the polish surface of the substrate under the condition that liquid not containing abrasive grains is supplied to the polishing surface of the grinding wheel so as to eliminate the irregularities on the surface for smoothening and feeding abrasive grains to the smoothened polished surface of the substrate for further polishing the polished surface uniformly by a specified film thickness.</p> |
