MOS TRANSISTOR WITH SHIELD COPLANAR WITH GATE ELECTRODE

摘要

A MOS transistor including a gate electrode (22) on a gate oxide (20) over a channel region (26) between a source and drain region also includes a shield electrode (24) at least partially on the gate oxide (20) adjacent to, self-aligned with, and at least partially coplanar with the gate electrode (22) and between the gate electrode (22) and drain region. Placing the shield electrode (24) on the gate oxide (20) improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.