| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of correcting a pattern on a substrate, which can correct even a pattern with microline widths and simultaneously correct a white defect and a black defect. SOLUTION: A carbon thin film 4 is formed on and around a white defect 3 with a convergent ion beam (b). Then, this substrate is subjected to etching, leaving the Si substrate at and around the white defect 3 unetched because the carbon thin film 4 is not etched (c). Next, a resist 2 and the carbon thin film 4 are removed (d), and a resist 6 is applied again to the Si substrate (e). Subsequently, an intended pattern is formed on the resist 6 only on a portion to be corrected (f). Then, this substrate is subjected to etching, forming an etched correction portion 7 corresponding to the portion to be corrected (g). Thereafter, the resist 6 is removed, so that the Si substrate 1 with the intended pattern etched is formed (h). |
