| 摘要 |
An apparatus and method supports thermal processing of a microelectronic device such as a semiconductor chip in a substrate by heating the substrate with secondary radiation from an energy transfer device (40), which has a first set of energy transfer regions comprised of an emissive and thermally conductive material, and a second set of thermally insulating regions comprised of a reduced emissivity and reduced thermal conductivity material or free space. A multi-zone radiant energy source (30) provides radiative eergy to energy transfer device (40), with a process controller (36), preferably a multi-zone controller, altering the amount of energy provided by each heat zone associated with each emissive region of energy transfer device (40). Sensors detect the thermal energy level of each energy transfer region to allow controller (36) to adjust the secondary radiation emitted by each region in real time, resulting in a predetermined and controlled distribution of thermal energy on substrate (20). Energy transfer device (40) can have plural emissive and thermally conductive concentric rings separated from each other by reduced emissivity and reduced thermal conductivity regions such as free space gaps (42). Alternatively, a solid plate (54) having an emissive coating or emissive surface (52) can have reduced emissivity and reduced conductivity isolation regions such as trenches (56) for defining the multi-zone high-emissivity and high thermal conductivity energy transfer regions. |
