| 摘要 |
The invention relates to a high voltage flange for a semiconductor component, wherein a semiconductor body (1) having a first type of conductivity is provided with a highly doped region having a second type of conductivity in its edge area. Said highly doped region (4) having a second type of conductivity consists of several island-like areas (10, 11) which are embedded at least partially in a highly doped surface layer (3) having a first type of conductivity. The distance between the island-like areas (10, 11) is shorter than the width of the space charge region in the highly doped surface layer (3) during breakdown voltage between an island-like area (10, 11) and the highly doped surface layer (3). |
