Semiconductor photoelectric conversion device

摘要

An N+N-(or I)PIN or P+P-(or I)NIP type photo transistor comprises semiconductor layers serving as collector, base and emitter regions and a semiconductor layer which is disposed between the semiconductor layers serving as the base and emitter regions and serves as a photo carrier generating regions. The semiconductor layers serving as the photo carrier generating region and emitter regions are both formed of a non-single-crystal semiconductor. By replacing the semiconductor layer serving as the emitter region in the N+N-(or I)PIN or P+P-(I)NIP type photo transistor with a conductive layer which makes Schottky contact with the non-single-crystal semiconductor layer as the photo carrier generating region, a Schottky junction type photo transistor is obtained. By replacing the above said conductive layer with conductive layer which is disposed on the non-single-crystal semiconductor layer as the photo carrier generating region through a barrier film which permits flowing therethrough of tunnel current, a tunnel type photo transistor is constituted.