发明名称 |
Memory cell evaluation semiconductor device, method of fabricating the same and memory cell evaluation method |
摘要 |
A dummy cell part <31> includes a capacitor <311> having a first end which is connected to one of a plurality of pads <2> and a P-N junction element <312> having a first end which is connected to one of the plurality of pads <2> and a second end which is connected to one of the plurality of pads <2>. A sense part <32> is connected to a second end of the capacitor <311>, for sensing a potential on the second end of the capacitor <311> and outputting the result of sensing to one of the plurality of pads <2>. Thus, a memory cell evaluation semiconductor device which can evaluate a single memory cell, a method of fabricating the same and a memory cell evaluation method are obtained.
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申请公布号 |
US5978294(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19980112506 |
申请日期 |
1998.07.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UENO, SHUICHI;YAMASHITA, TOMOHIRO;ODA, HIDEKAZU;KOMORI, SHIGEKI |
分类号 |
G01R31/28;G11C7/14;G11C11/401;G11C11/406;G11C29/12;G11C29/24;H01L21/66;H01L21/8242;H01L27/108;(IPC1-7):G11C7/02;G11C11/24 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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