| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polisher having a high purity and excellent stability and reproducibility and not scratching a substrate or a film to be polished and to provide a method for leveling the film to be polished of a semiconductor substrate by CMP. SOLUTION: This polisher is adapted so that the Na content of a water-soluble cellulose added to the polisher may be low, the content of silica polishing particles may be 0.1-50 wt.%, a pH modifier, if necessary, is used, and an aqueous water-soluble amine solution is used as the modifier, and the content of alkali metal elements may be 5C ppm or below, where C wt.% is the concentration of the water-soluble cellulose. It is suitable that the concentration of the water-soluble cellulose is 0.05-4 wt.%, desirably, 0.1-1 wt.% particularly desirably, 0.1-0.5 wt. %. The content of the water-soluble amine in the polisher is 0.1-20 wt. %, desirably 1-15 wt.%, more desirably, 3-10 wt.%.</p> |
