| 摘要 |
In an image sensor 1 wherein an N+-type impurity layer 13 to become a light-receiving part of a first conductive type is formed in a well layer 12 of a second conductive type (P-type) provided in a semiconductor substrate 11 of the first conductive type (N-type), an N--type impurity layer 14 whose impurity concentration is lower than that of the N+-type impurity layer 13 and connected to the lower side of the N+-type impurity layer 13 is provided between the N+-type impurity layer 13 and the P-type well layer 12. Alternatively, a P-type impurity layer (not shown) whose impurity concentration is lower than that of the P-type well layer 12 and joining with the lower side of the N+-type impurity layer 13 may be provided.
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