发明名称 |
Mechanism for preventing metallic ion contamination of a wafer in ion implantation equipment |
摘要 |
When employing conventional ion implantation equipment, the peripheral edge of the wafer is contaminated by metallic ions generated from the collision of the accelerated ion beam with the disk that supports the target, namely a wafer. The present invention provides a magnet for forming a magnetic field which will repel the generated metallic ions. The magnet is disposed on the disk and surrounds the wafer to prevent the metallic ions from impinging the wafer.
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申请公布号 |
US5977553(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19980034328 |
申请日期 |
1998.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, SANG-GUEN;SOH, CHANG-EOB |
分类号 |
H01J37/20;C23C14/48;H01J37/317;H01L21/203;H01L21/265;(IPC1-7):H01J37/244 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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