发明名称 |
Localization of defects of a metallic layer of a semiconductor circuit |
摘要 |
A method for locating possible defects on an opaque layer deposited on a production wafer of a semiconductor circuit, consisting in locally radiating an upper surface of the wafer by means of a laser, and detecting the occurrence of a current in a diode constituted by a PN junction placed under the opaque layer to be examined.
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申请公布号 |
US5976898(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960770476 |
申请日期 |
1996.12.20 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
MARTY, MICHEL;BRUN, ALAIN |
分类号 |
G01R31/311;(IPC1-7):G01R31/26;H01L21/00;H01L21/66 |
主分类号 |
G01R31/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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