发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A pin diode is formed by a p+ collector region, an n type buffer region, an n- region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region to reach n- region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+ cathode region. An anode electrode is formed to be electrically connected to p+ collector region. The n+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
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申请公布号 |
US5977570(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960683279 |
申请日期 |
1996.07.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAKAHASHI, TETSUO;NAKAMURA, KATSUMI;MINATO, TADAHARU;HARADA, MASANA |
分类号 |
H01L29/74;H01L21/331;H01L21/332;H01L29/06;H01L29/739;H01L29/745;H01L29/749;H01L29/76;H01L29/78;H01L29/861;H01L29/868;H01L29/94;H01L31/111;H01L31/113;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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主权项 |
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地址 |
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