Thin film capacitor

摘要

Ferroelectric PbZrxT1-xO3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350 DEG C., followed by thermal treatment at 620 DEG C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.