发明名称 |
Intermediate layer lithography |
摘要 |
An isotropic or partially isotropic etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth patterned photoresist (213, 214) with a buried antireflective coating also acting as an etchstop or a sacrificial layer. The reduced linewidth pattern (213, 214) provide an etch mask for subsequent anisotropic etching of underlying material such as polysilicon (206) or metal or insulator or ferroelectric.
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申请公布号 |
US5976769(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960680340 |
申请日期 |
1996.07.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAPMAN, RICHARD ALEXANDER |
分类号 |
G03F7/26;G02B1/11;G03F7/09;G03F7/40;H01L21/027;H01L21/28;H01L21/302;H01L21/306;H01L21/3065;H01L21/3213;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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