| 摘要 |
PROBLEM TO BE SOLVED: To stably obtain a thick film having a high light transmittance and a moderate resistivity at a high rate by setting the max. value of magnetic flux density in a direction parallel to the surface of a zinc oxide target at a specified value or below on the surface of the target. SOLUTION: The max. value of magnetic flux density in a direction parallel to the surface of a zinc oxide target is set at <=350 G on the surface of the target. The ratio (D/L) of the distance D between the surface of a magnet and the surface of the target to the distance L between the magnetic poles of the magnet is preferably set at <=1.0. A magnet circuit formed so as to provide a plurality of closed loops of a magnetic field on the surface of a target to the single target is moved back and forth along the surface of the zinc oxide target. The zinc oxide target has <=0.1 Ω.cm specific resistance and >=99% purity. A reflection layer 302, a zinc oxide film 303, an n-type a-Si layer 304, an i-type a-Si layer 305, a p-type μc-Si layer 306, a transparent electrode 307 and a current collection electrode 308 are successively laminated on a substrate 301 to form the objective photovoltaic element. This element effectively utilizes incident light and gives a photoelectric conversion body. |
