发明名称 |
High-voltage-resistant MOS transistor, and corresponding manufacturing process |
摘要 |
A MOS transistor capable of withstanding relatively high voltages is of a type integrated on a region included in a substrate of semiconductor material, having conductivity of a first type and comprising a channel region intermediate between a first active region of source and a second active region of drain. Both these source and drain regions have conductivity of a second type and extend from a first surface of the substrate. The transistor also has a gate which includes at least a first polysilicon layer overlying the first surface of at least the channel region, to which it is coupled capacitively through a gate oxide layer. According to the invention, the first polysilicon layer includes a mid-portion which only overlies the channel region and has a first total conductivity of the first type, and a peripheral portion with a second total conductivity differentiated from the first total conductivity. The peripheral portion partly overlies the source and drain active regions toward the channel region.
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申请公布号 |
US5977591(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19970824888 |
申请日期 |
1997.03.18 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
FRATIN, LORENZO;RIVA, CARLO |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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