发明名称 |
Method of forming isolated regions of oxide |
摘要 |
A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over a portion of a substrate. A first silicon nitride layer is formed over the pad oxide layer. A polysilicon buffer layer is then formed over the first silicon nitride layer. A second silicon nitride layer is formed over the polysilicon layer. A photoresist layer is formed and patterned over the second silicon nitride layer. An opening is etched through the second silicon nitride layer and the polysilicon buffer layer to expose a portion of the first silicon nitride layer. A third silicon nitride region is then formed on at least the polysilicon buffer layer exposed in the opening. The first silicon nitride layer is etched in the opening. A field oxide region is then formed in the opening.
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申请公布号 |
US5977607(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19950447362 |
申请日期 |
1995.05.23 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
HODGES, ROBERT LOUIS;BRYANT, FRANK RANDOLPH;CHEN, FUSEN E.;WEI, CHE-CHIA |
分类号 |
H01L21/32;H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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