| 摘要 |
A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm2. In a currently preferred embodiment, the dielectric layer has composition Ta1-yAlyOxNz, with y DIFFERENCE 0.1, x DIFFERENCE 2.4, and z DIFFERENCE 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.
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