| 摘要 |
A method and apparatus for reading or strobing antifuse circuits in a memory device is described. A read signal, also called a strobe signal, is generated from a circuit which includes a model antifuse similar to antifuses employed in the antifuse circuits. The read signal is a single pulse having a duration determined by an amount of time needed to charge the model antifuse such that the read signal is long enough to be applied to properly read antifuse circuits in the memory device. A reset pulse may be generated having a duration determined by the amount of time needed to charge the model antifuse, and the reset pulse may be applied to initialize registers in the memory device and to generate the read signal.
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