| 摘要 |
PURPOSE:To improve the storing characteristics of data stored in a memory cell by a method wherein, in a semiconductor integrated circuit device provided with non-volatile memory function, an interlayer insulating film between a base electrode of a field effect transistor (TR) and upper layer interconnection thereof is produced by CVD process using, e.g., inorganic source gas. CONSTITUTION:A floating base electrode and a control gate electrode 7 of a field effect transistor (TR)Qm comprising a memory cell of EPROM are composed of a polycrystalline silicon film leading-in, e.g., an impurity (phosphorus or arsenic) reducing resistance values. Next, a silicon oxide film 8 on the electrode 7 is formed in the high electric field near a drain region 9 to prevent the hot carriers (electron: data) implanted in the electrode 5 from leaking out. The field effect TRQm is connected to data line 12 comprising, e.g., aluminum film with low resistance value to accelerate the reading out speed of data through a connecting hole made in an interlayer insulating film 10. A silicon oxide film 10 is produced by thermal cracking inorganic source gas, i.e., inorganic silane such as monosilane, dichlorosilane, etc., while a phosphosilicate glass film 10B is formed by oxidizing organic source gas, i.e., inorganic silane and phophine in the same furnace.
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