发明名称 |
Method of forming insulating film with few hydrogen atom inclusions |
摘要 |
In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N-H) and generates monoatomic nitrogen when the gas dissociates.
|
申请公布号 |
US5976918(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19970985633 |
申请日期 |
1997.12.04 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MATSUOKA, TOSHIMASA;NAKANO, MASAYUKI;MORISHITA, SATOSHI;IWATA, HIROSHI;KAKIMOTO, SEIZO;FUKUSHIMA, TAKASHI |
分类号 |
H01L29/78;H01L21/314;H01L21/318;H01L21/324;(IPC1-7):H01L21/00;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|