发明名称 Method of producing semiconductor device and encapsulating pellet employed therein
摘要 PCT No. PCT/JP96/00523 Sec. 371 Date Nov. 7, 1996 Sec. 102(e) Date Nov. 7, 1996 PCT Filed Mar. 5, 1996 PCT Pub. No. WO96/27900 PCT Pub. Date Sep. 12, 1996A method of production of a semiconductor device such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a cavity-fill form. In this method, first, a semiconductor element (3) is placed in a cavity (6) formed in a multiple step-like substrate (2). Under this state, a pellet (7), which is in a solid state at a normal temperature, made of an encapsulating resin composition containing specific components, and has specific characteristics, is placed on the semiconductor element (3). Next, the semiconductor device is heated so that the pellet can melt to fill the cavity (6) with the composition, thereby encapsulating the semiconductor device (3). According to the present invention, a semiconductor device having low stress performance and excellent moisture-proof reliability can be efficiently produced.
申请公布号 US5976916(A) 申请公布日期 1999.11.02
申请号 US19960737137 申请日期 1996.11.07
申请人 NITTO DENKO CORPORATION 发明人 KUWAMURA, MAKOTO;IKEMURA, KAZUHIRO;AKIZUKI, SHINYA;FUKUSHIMA, TAKASHI;SUDO, SHINICHIRO;ITO, SATOSHI
分类号 H01L21/54;H01L23/13;H01L23/24;(IPC1-7):H01L21/56 主分类号 H01L21/54
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