发明名称 MULTILAYER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate the necessity of reforming a mask pattern for manufacturing a semiconductor device even when the number of calculating bit is altered by providing a 1-bit signal processor made of the same pattern at every semiconductor substrate, and laminating semiconductor substrates of the number responsive to the calculating bits through insulating films in a multilayer. CONSTITUTION:A 1-bit signal processor 2 made of the same pattern at every semiconductor substrate 1 is provided, the semiconductor substrates 1 of the number responsive to the number of calculating bits are laminated through insulating films 8 in a multilayer. When the number of the calculating bits is altered from n bits to (n+l) bits or more or (n-l) bits or less, The substrates 1 are added or omitted in predetermined number in the n layers except the uppermost layer of the original semiconductor device in response to the alteration, and it is not necessary to reform the mask pattern for manufacturing the semiconductor device. Thus, the number of the mask patterns can be reduced in the manufacture of the device.
申请公布号 JPS62237752(A) 申请公布日期 1987.10.17
申请号 JP19860082616 申请日期 1986.04.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAGAWA SHINICHI;MATSUMURA TETSUYA
分类号 H01L27/00;H01L21/822;H01L27/06 主分类号 H01L27/00
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