Method for fabricating a high bias device compatible with a low bias device

摘要

A method for fabricating a high-bias device compatible with a low-bias device is provided. The method of the invention includes using a doped well as a drift region of the high-bias device so that the drift region can be formed simultaneously when a well for a low-bias device is formed. The method of the invention also fabricates the high-bias device and the low-bias device simultaneously, using a commonly used photomask. Several ion implantation processes are also performed simultaneously. There is no need of some extra fabrication of photomasks and ion implantation processes separately used for forming the high-bias device.