发明名称 |
Method for growth of in situ p-type semiconductor films using a group V flux |
摘要 |
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.
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申请公布号 |
US5976958(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19970965390 |
申请日期 |
1997.11.06 |
申请人 |
HUGHES ELECTRONICS CORPORATION |
发明人 |
RAJAVEL, RAJESH D.;WU, OWEN K.;BREWER, PETER D.;DELYON, TERENCE J. |
分类号 |
C30B23/02;H01L21/363;(IPC1-7):H01L21/20 |
主分类号 |
C30B23/02 |
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