发明名称 |
Method for manufacturing a solid state image sensing device |
摘要 |
A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.
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申请公布号 |
US5976906(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960733914 |
申请日期 |
1996.10.18 |
申请人 |
MINOLTA CO., LTD. |
发明人 |
TAKADA, KENJI;ISHIDA, KOUICHI;HAMAKAWA, YOSHIHIRO;OKAMOTO, HIROAKI |
分类号 |
H01L27/148;H01L31/0224;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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