发明名称 |
Semiconductor device having an improved structure and capable of greatly reducing its occupied area |
摘要 |
A semiconductor device includes a source and a drain formed in a device region of a semiconductor substrate, and an electrode withdrawal portion having an impurity concentration higher than that of the device region. The electrode withdrawal portion is formed so as to adjoin either one of the source and drain. An electrode for the source or drain adjacent to the electrode withdrawal portion is used jointly as an electrode for the electrode withdrawal portion.
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申请公布号 |
US5977592(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19970925091 |
申请日期 |
1997.09.08 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
BABA, SHUNSUKE |
分类号 |
H01L29/41;H01L21/336;H01L21/8238;H01L27/092;H01L29/10;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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