发明名称 |
Condensed memory matrix |
摘要 |
A condensed memory matrix is fabricated by conductively connecting the attachment bumps of a substrate with the attachment bumps of a wafer of DRAM chips and physically bonding the juxtaposed surfaces of the substrate and the wafer with a dielectric curable resin. An array of heat fins is bonded to the inactive surface of the wafer by a thermally conductive curable resin.
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申请公布号 |
US5977629(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960590775 |
申请日期 |
1996.01.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FOGAL, RICH;WOOD, ALAN G. |
分类号 |
H01L21/56;H01L23/31;H01L23/36;H01L25/065;H01L25/07;(IPC1-7):H01L23/10;H01L23/34;H01L23/48;H01L23/52 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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