发明名称 Condensed memory matrix
摘要 A condensed memory matrix is fabricated by conductively connecting the attachment bumps of a substrate with the attachment bumps of a wafer of DRAM chips and physically bonding the juxtaposed surfaces of the substrate and the wafer with a dielectric curable resin. An array of heat fins is bonded to the inactive surface of the wafer by a thermally conductive curable resin.
申请公布号 US5977629(A) 申请公布日期 1999.11.02
申请号 US19960590775 申请日期 1996.01.24
申请人 MICRON TECHNOLOGY, INC. 发明人 FOGAL, RICH;WOOD, ALAN G.
分类号 H01L21/56;H01L23/31;H01L23/36;H01L25/065;H01L25/07;(IPC1-7):H01L23/10;H01L23/34;H01L23/48;H01L23/52 主分类号 H01L21/56
代理机构 代理人
主权项
地址